The S6R1616(V/C/W)1M and S6R1608(V/C/W)1M is a 16,789,216-bit high-speed Static Random Access Memory organized as 1M(2M) words by 16(8) bits. The
S6R1616(V/C/W)1M (S6R1608(VC/W)1M) uses 16(8) common input and out put lines and have an output enable pin which operates faster than address access time at read cycle. And S6R1616(V/C/W)1M allows that lower and upper byte access by data byte control(UB, LB). The device is fabricated using advanced CMOS process,6-TR based cell technology and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications.
The S6R1616(V/C/W)1M is packaged in industry standard 48 TSOP1 and 48FBGA.
The S6R1608(V/C/W)1M is packaged in industrial standard 44TSOP2 and 48FBGA.
Features
• Fast Access Time : 8, 10, 12, 15ns(Max)
• CMOS Low Power Dissipation
Standby (TTL) : 35mA (Max.)
(CMOS) : 28mA (Max.)
Operating : 85mA (8ns, Max.)
75mA (10ns, Max.)
• Single 3.3 ±0.3V or 5.0 ±0.5V Power Supply
- S6R16xxV1M : 3.3 ±0.3V Power Supply
- S6R16xxC1M : 5.0 ±0.5V Power Supply
• Wide range of Power Supply
- S6R16xxW1M : 1.65V ~ 3.6V Power Supply
• TTL Compatible Inputs and Outputs
• Fully Static Operation, No Clock or Refresh required
• Three State Outputs
• Data Byte Control(x16 Mode)
LB : I/O0~ I/O7, UB : I/O8~ I/O15
• Standard 48 TSOP1 and 48FBGA Package pin configura tions for 1M x 16
• Standard 44 TSOP2 and 48FBGA Package pin configura tions for 2M x 8
• ROHS compliant
• Operating in Commercial and Industrial Temperature range
Keywords: Async FAST SRAM,SRAM
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